S29GL01GT10DHI010
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- Mfr.Part #
- S29GL01GT10DHI010
- Manufacturer
- Infineon Technologies
- Package / Case
- 64-LBGA
- Datasheet
- Download
- Description
- IC FLASH 1GBIT PARALLEL 64FBGA
- Stock
- 5
- In Stock ：
- 5
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Memory
- Height Seated (Max) :
- 1.4mm
- Terminal Pitch :
- 1mm
- Supply Voltage-Max (Vsup) :
- 3.6V
- Number of Functions :
- 1
- HTS Code :
- 8542.32.00.51
- JESD-30 Code :
- S-PBGA-B64
- Memory Density :
- 1073741824 bit
- Programming Voltage :
- 2.7V
- Surface Mount :
- yes
- Memory Width :
- 16
- Operating Mode :
- ASYNCHRONOUS
- Mounting Type :
- Surface Mount
- Published :
- 2016
- Operating Temperature :
- -40°C~85°C TA
- Supply Voltage-Min (Vsup) :
- 2.7V
- Package / Case :
- 64-LBGA
- Terminal Position :
- BOTTOM
- Memory Type :
- Non-Volatile
- Series :
- GL-T
- Supply Voltage :
- 3V
- Memory Size :
- 1Gb 128M x 8
- Write Cycle Time - Word, Page :
- 60ns
- Memory Interface :
- Parallel
- Width :
- 9mm
- RoHS Status :
- ROHS3 Compliant
- Memory Format :
- Flash
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Access Time :
- 100ns
- Packaging :
- Tray
- Voltage - Supply :
- 2.7V~3.6V
- Length :
- 9mm
- Organization :
- 64MX16
- Factory Lead Time :
- 13 Weeks
- Number of Terminations :
- 64
- Datasheets
- S29GL01GT10DHI010
GL-T Memory IC GL-T Series 9mm mm
S29GL01GT10DHI010 Overview
Its memory type can be classified as Non-Volatile. It comes in a Tray. It is available in 64-LBGA case. The memory size of the chip is 1Gb 128M x 8 Mb. This device utilizes a FLASH format memory which is of mainstream design. With an extended designed operating temperature of -40°C~85°C TA, this device is capable of lots of demanding applications. It is supplied votage within 2.7V~3.6V. Its recommended mounting type is Surface Mount. 64 terminations are planted on the chip. This part supports as many as 1 functions for the comprehensive working procedure. This ic memory chip is designed to be supplied with 3V. As a member of the GL-T series memory devices, this part plays an important role for its target applications. To alter the state of certain nonvolatile memory arrays, 2.7V programming voltage is required.
S29GL01GT10DHI010 Features
Package / Case: 64-LBGA
S29GL01GT10DHI010 Applications
There are a lot of Cypress Semiconductor Corp
S29GL01GT10DHI010 Memory applications.
- Cache memory
- cell phones
- eSRAM
- mainframes
- multimedia computers
- networking
- personal computers
- servers
- supercomputers
- telecommunications
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