S29GL01GS11TFB010

Manufacturer :

Infineon Technologies

Product Category :

Memory

Memory Interface :

Parallel

Access Time :

110ns

Programming Voltage :

3V

JESD-30 Code :

R-PDSO-G56

Series :

Automotive, AEC-Q100, GL-S

Memory Format :

Flash

Surface Mount :

yes

Operating Temperature :

-40°C~105°C TA

Supply Voltage-Max (Vsup) :

3.6V

HTS Code :

8542.32.00.51

Terminal Pitch :

0.5mm

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Operating Mode :

ASYNCHRONOUS

Package / Case :

56-TFSOP (0.724, 18.40mm Width)

Factory Lead Time :

13 Weeks

Memory Type :

Non-Volatile

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Length :

18.4mm

Memory Density :

1073741824 bit

Write Cycle Time - Word, Page :

60ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

56

Supply Voltage-Min (Vsup) :

2.7V

Terminal Position :

Dual

Voltage - Supply :

2.7V~3.6V

Supply Voltage :

3V

Width :

14mm

Memory Width :

8

Height Seated (Max) :

1.2mm

Number of Functions :

1

Organization :

128MX8

Packaging :

Tray

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Memory Size :

1Gb 64M x 16