S29GL01GP12TFI010

Manufacturer :

Infineon Technologies

Product Category :

Memory

JESD-609 Code :

e3

Power Supplies :

3/3.3V

Ready/Busy :

yes

Time@Peak Reflow Temperature-Max (s) :

40

Mounting Type :

Surface Mount

ECCN Code :

3A991.B.1.A

Operating Temperature :

-40°C~85°C TA

Data Bus Width :

8B

Data Polling :

yes

Terminal Pitch :

0.5mm

Number of Terminations :

56

Supply Voltage-Max (Vsup) :

3.6V

Voltage - Supply :

2.7V~3.6V

Sync/Async :

ASYNCHRONOUS

Command User Interface :

yes

Peak Reflow Temperature (Cel) :

260

Alternate Memory Width :

8

Memory Format :

Flash

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Number of Functions :

1

Termination :

SMD/SMT

Access Time (Max) :

120 ns

Series :

GL-P

Package / Case :

56-TFSOP (0.724, 18.40mm Width)

Memory Interface :

Parallel

Mount :

Surface Mount

Page Size :

8/16words

Supply Voltage :

3V

Programming Voltage :

3V

Memory Width :

1

Organization :

1GX1

Height Seated (Max) :

1.2mm

Packaging :

Tray

Length :

18.4mm

Terminal Position :

Dual

Standby Current-Max :

0.000005A

Write Cycle Time - Word, Page :

120ns

Number of Pins :

56

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Supply Voltage-Min (Vsup) :

2.7V

Published :

2003

Contact Plating :

Tin

Density :

1 Gb

Toggle Bit :

yes

Memory Size :

1Gb 128M x 8

Memory Type :

Non-Volatile

Sector Size :

128K

REACH SVHC :

No SVHC

Number of Sectors/Size :

1k

Lead Free :

Lead Free

Common Flash Interface :

yes

HTS Code :

8542.32.00.51

Nominal Supply Current :

110mA