RZR025P01TL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

1W Ta

Mounting Type :

Surface Mount

Pin Count :

3

Turn On Delay Time :

9 ns

Nominal Vgs :

-300 mV

Rds On (Max) @ Id, Vgs :

61m Ω @ 2.5A, 4.5V

Height :

850μm

Number of Elements :

1

Factory Lead Time :

20 Weeks

Published :

2006

Power Dissipation :

1W

Gate to Source Voltage (Vgs) :

10V

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

2.5A Ta

Time@Peak Reflow Temperature-Max (s) :

10

Drain to Source Breakdown Voltage :

-12V

Lead Free :

Lead Free

Fall Time (Typ) :

85 ns

Drain-source On Resistance-Max :

0.061Ohm

Turn-Off Delay Time :

130 ns

Length :

2.9mm

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Terminal Form :

Gull wing

Drain to Source Voltage (Vdss) :

12V

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

1350pF @ 6V

Mount :

Surface Mount

Pbfree Code :

yes

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

FET Type :

P-Channel

Operating Temperature :

150°C TJ

Number of Terminations :

3

Rise Time :

35ns

Vgs(th) (Max) @ Id :

1V @ 1mA

Element Configuration :

Single

Width :

1.6mm

Continuous Drain Current (ID) :

2.5A

Packaging :

Tape and Reel (TR)

Package / Case :

SC-96

JESD-609 Code :

e1

Vgs (Max) :

±10V

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 4.5V

Radiation Hardening :

No

Transistor Element Material :

SILICON

Threshold Voltage :

-300mV

REACH SVHC :

No SVHC