RZM002P02T2L

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

1.4nC @ 4.5V

Contact Plating :

Copper, Tin

Terminal Form :

Flat

Operating Temperature :

150°C TJ

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

Turn-Off Delay Time :

17 ns

Rise Time :

4ns

RoHS Status :

ROHS3 Compliant

Package / Case :

SOT-723

Vgs(th) (Max) @ Id :

1V @ 100µA

Packaging :

Cut Tape (CT)

Power Dissipation-Max :

150mW Ta

Terminal Position :

Dual

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e2

Fall Time (Typ) :

17 ns

Transistor Element Material :

SILICON

Number of Pins :

3

Published :

2009

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 200mA, 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

10V

Terminal Finish :

Tin/Copper (Sn/Cu)

Number of Terminations :

3

Drain to Source Voltage (Vdss) :

20V

Turn On Delay Time :

6 ns

Pbfree Code :

yes

FET Type :

P-Channel

Drain Current-Max (Abs) (ID) :

0.2A

ECCN Code :

EAR99

Continuous Drain Current (ID) :

200mA

Vgs (Max) :

±10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

1.2V 4.5V

Drain to Source Breakdown Voltage :

-20V

Current - Continuous Drain (Id) @ 25°C :

200mA Ta

Time@Peak Reflow Temperature-Max (s) :

10

Input Capacitance (Ciss) (Max) @ Vds :

115pF @ 10V

Pin Count :

3

Factory Lead Time :

16 Weeks

Mount :

Surface Mount

Power Dissipation :

150mW

Lead Free :

Lead Free