RZM002P02T2L

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Radiation Hardening :

No

FET Type :

P-Channel

Published :

2009

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

10

Transistor Application :

SWITCHING

Packaging :

Cut Tape (CT)

Terminal Form :

Flat

Current - Continuous Drain (Id) @ 25°C :

200mA Ta

Turn-Off Delay Time :

17 ns

Package / Case :

SOT-723

Operating Temperature :

150°C TJ

Peak Reflow Temperature (Cel) :

260

Pbfree Code :

yes

Terminal Finish :

Tin/Copper (Sn/Cu)

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

-20V

Vgs (Max) :

±10V

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

150mW

Configuration :

SINGLE WITH BUILT-IN DIODE

Contact Plating :

Copper, Tin

Mount :

Surface Mount

Number of Terminations :

3

Rise Time :

4ns

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

17 ns

Input Capacitance (Ciss) (Max) @ Vds :

115pF @ 10V

Number of Pins :

3

Terminal Position :

Dual

Turn On Delay Time :

6 ns

Continuous Drain Current (ID) :

200mA

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 200mA, 4.5V

Drain to Source Voltage (Vdss) :

20V

Vgs(th) (Max) @ Id :

1V @ 100µA

Gate to Source Voltage (Vgs) :

10V

Transistor Element Material :

SILICON

JESD-609 Code :

e2

Drain Current-Max (Abs) (ID) :

0.2A

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

1.4nC @ 4.5V

Factory Lead Time :

16 Weeks

Power Dissipation-Max :

150mW Ta

Drive Voltage (Max Rds On,Min Rds On) :

1.2V 4.5V