RZF013P01TL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

P-Channel

Current - Continuous Drain (Id) @ 25°C :

1.3A Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

260m Ω @ 1.3A, 4.5V

Power Dissipation-Max :

800mW Ta

Terminal Position :

Dual

Vgs(th) (Max) @ Id :

1V @ 1mA

Vgs (Max) :

±10V

Package / Case :

3-SMD, Flat Lead

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Number of Elements :

1

Mounting Type :

Surface Mount

Operating Temperature :

150°C TJ

DS Breakdown Voltage-Min :

12V

Terminal Finish :

Tin/Copper (Sn/Cu)

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

2.4nC @ 4.5V

JESD-30 Code :

R-PDSO-F3

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.26Ohm

Continuous Drain Current (ID) :

1.3A

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

16 Weeks

Transistor Application :

SWITCHING

Published :

2009

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e2

Input Capacitance (Ciss) (Max) @ Vds :

290pF @ 6V

Packaging :

Cut Tape (CT)

Drain to Source Voltage (Vdss) :

12V

Time@Peak Reflow Temperature-Max (s) :

10

Lead Free :

Lead Free

Mount :

Surface Mount