RZF013P01TL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Drain to Source Voltage (Vdss) :

12V

Current - Continuous Drain (Id) @ 25°C :

1.3A Ta

Input Capacitance (Ciss) (Max) @ Vds :

290pF @ 6V

Continuous Drain Current (ID) :

1.3A

Time@Peak Reflow Temperature-Max (s) :

10

Number of Terminations :

3

Operating Temperature :

150°C TJ

Vgs(th) (Max) @ Id :

1V @ 1mA

Vgs (Max) :

±10V

Terminal Position :

Dual

Published :

2009

Peak Reflow Temperature (Cel) :

260

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e2

Package / Case :

3-SMD, Flat Lead

ECCN Code :

EAR99

Factory Lead Time :

16 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

260m Ω @ 1.3A, 4.5V

Terminal Finish :

Tin/Copper (Sn/Cu)

FET Type :

P-Channel

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Power Dissipation-Max :

800mW Ta

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

2.4nC @ 4.5V

Pin Count :

3

Drain-source On Resistance-Max :

0.26Ohm

DS Breakdown Voltage-Min :

12V

Packaging :

Cut Tape (CT)

JESD-30 Code :

R-PDSO-F3

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Transistor Application :

SWITCHING