RYM002N05T2CL
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- Mfr.Part #
- RYM002N05T2CL
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SOT-723
- Datasheet
- Download
- Description
- MOSFET N-CH 50V 200MA VMT3
- Stock
- 30,000
- In Stock ：
- 30,000
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lead Free :
- Lead Free
- Operating Temperature :
- 150°C TJ
- Transistor Application :
- SWITCHING
- Terminal Position :
- Dual
- Rds On (Max) @ Id, Vgs :
- 2.2 Ω @ 200mA, 4.5V
- JESD-30 Code :
- R-PDSO-F3
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Number of Channels :
- 1
- Factory Lead Time :
- 16 Weeks
- Published :
- 2010
- Gate to Source Voltage (Vgs) :
- 8V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Turn On Delay Time :
- 5 ns
- Fall Time (Typ) :
- 43 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 0.9V 4.5V
- Element Configuration :
- Single
- Terminal Finish :
- Tin/Copper (Sn/Cu)
- Terminal Form :
- Flat
- Packaging :
- Tape and Reel (TR)
- Vgs (Max) :
- ±8V
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 800mV @ 1mA
- FET Type :
- N-Channel
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Continuous Drain Current (ID) :
- 200mA
- Rise Time :
- 8ns
- Turn-Off Delay Time :
- 17 ns
- Drain Current-Max (Abs) (ID) :
- 0.2A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 200mA Ta
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- SOT-723
- Drain-source On Resistance-Max :
- 2.8Ohm
- Power Dissipation-Max :
- 150mW Ta
- Input Capacitance (Ciss) (Max) @ Vds :
- 26pF @ 10V
- JESD-609 Code :
- e2
- Drain to Source Breakdown Voltage :
- 50V
- Datasheets
- RYM002N05T2CL
N-Channel Tape & Reel (TR) 2.2 Ω @ 200mA, 4.5V ±8V 26pF @ 10V SOT-723
RYM002N05T2CL Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 26pF @ 10V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 200mA amps.In this device, the drain-source breakdown voltage is 50V and VGS=50V, so the drain-source breakdown voltage is 50V in this case.A device can conduct a maximum continuous current of [0.2A] according to its drain current.It is [17 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 5 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 8V.A device like this reduces its overall power consumption when it uses drive voltage (0.9V 4.5V).
RYM002N05T2CL Features
a continuous drain current (ID) of 200mA
a drain-to-source breakdown voltage of 50V voltage
the turn-off delay time is 17 ns
RYM002N05T2CL Applications
There are a lot of ROHM Semiconductor
RYM002N05T2CL applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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