RYC002N05T316

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

800mV @ 1mA

Drive Voltage (Max Rds On,Min Rds On) :

4.5V

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

Terminal Finish :

Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

Published :

2011

Transistor Element Material :

SILICON

Package / Case :

TO-236-3, SC-59, SOT-23-3

JESD-30 Code :

R-PDSO-G3

Operating Temperature :

-55°C~150°C TJ

DS Breakdown Voltage-Min :

50V

Drain to Source Voltage (Vdss) :

50V

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

200mA Ta

Drain-source On Resistance-Max :

2.8Ohm

Number of Terminations :

3

FET Type :

N-Channel

Pbfree Code :

yes

Power Dissipation-Max :

350mW Tc

Surface Mount :

yes

Continuous Drain Current (ID) :

200mA

RoHS Status :

ROHS3 Compliant

Qualification Status :

Not Qualified

Vgs (Max) :

±8V

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

16 Weeks

Transistor Application :

SWITCHING

Lead Free :

Lead Free

JESD-609 Code :

e1

Packaging :

Cut Tape (CT)

Rds On (Max) @ Id, Vgs :

2.2 Ω @ 200mA, 4.5V

Drain Current-Max (Abs) (ID) :

0.2A

Time@Peak Reflow Temperature-Max (s) :

10

Input Capacitance (Ciss) (Max) @ Vds :

26pF @ 10V

Pin Count :

3

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260