RX3G18BGNC16

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Brand :

Rohm Semiconductor

Pin Count :

3

Gate Charge (Qg) (Max) @ Vgs :

168 nC @ 10 V

Transistor Polarity :

N-Channel

Qualification :

-

Transistor Type :

Power MOSFET

Power Dissipation :

125W

Operating Temperature :

150°C (TJ)

Drain to Source Voltage (Vdss) :

40 V

Minimum Operating Temperature :

- 55 C

Product Type :

MOSFET

Current - Continuous Drain (Id) @ 25°C :

180A (Tc)

Subcategory :

MOSFETs

Maximum Operating Temperature :

+ 150 C

Continuous Drain Current Id :

180A

Package :

Tube

Channel Type :

N Channel

Mounting Type :

Through Hole

Number of Elements per Chip :

1

Supplier Device Package :

TO-220AB

Product Status :

Active

Rds On (Max) @ Id, Vgs :

1.64mOhm @ 90A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

12000 pF @ 20 V

Vgs (Max) :

±20V

Power Dissipation (Max) :

125W (Tc)

RoHS :

Details

Configuration :

Single

Package / Case :

TO-220-3

Mounting Style :

Through Hole

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Number of Channels :

1 Channel

Manufacturer :

Rohm Semiconductor

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Package Type :

TO-220AB

Product Category :

MOSFET

Channel Mode :

Enhancement

Packaging :

Tube

Series :

-

Rise Time :

25 ns

FET Feature :

-