RV1C002UNT2CL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

100mW

Number of Terminations :

3

Published :

2014

Terminal Position :

BOTTOM

Input Capacitance (Ciss) (Max) @ Vds :

12pF @ 10V

Transistor Application :

SWITCHING

Number of Pins :

3

Package / Case :

3-SMD, No Lead

Fall Time (Typ) :

25 ns

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

1.2V 4.5V

Operating Temperature :

150°C TJ

Rds On (Max) @ Id, Vgs :

2 Ω @ 150mA, 4.5V

Number of Elements :

1

Packaging :

Cut Tape (CT)

Turn-Off Delay Time :

12 ns

Lead Free :

Lead Free

Rise Time :

4ns

Power Dissipation-Max :

100mW Ta

Current - Continuous Drain (Id) @ 25°C :

150mA Ta

Mount :

Surface Mount

Factory Lead Time :

16 Weeks

Configuration :

SINGLE WITH BUILT-IN DIODE

Continuous Drain Current (ID) :

150mA

Mounting Type :

Surface Mount

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

1V @ 100µA

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

0.15A

Gate to Source Voltage (Vgs) :

8V

Vgs (Max) :

±8V

Drain to Source Breakdown Voltage :

20V

Turn On Delay Time :

3 ns

ECCN Code :

EAR99