RUR020N02TL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

SC-96

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

17ns

Transistor Application :

SWITCHING

Number of Terminations :

3

Fall Time (Typ) :

30 ns

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e1

Number of Pins :

3

Vgs(th) (Max) @ Id :

1V @ 1mA

Peak Reflow Temperature (Cel) :

260

Drain Current-Max (Abs) (ID) :

2A

Continuous Drain Current (ID) :

2A

Published :

2012

Number of Channels :

1

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

6 ns

Input Capacitance (Ciss) (Max) @ Vds :

180pF @ 10V

Turn-Off Delay Time :

30 ns

Drain to Source Breakdown Voltage :

20V

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

105m Ω @ 2A, 4.5V

Operating Temperature :

150°C TJ

Current - Continuous Drain (Id) @ 25°C :

2A Ta

Pbfree Code :

yes

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

10

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

10V

Gate Charge (Qg) (Max) @ Vgs :

2nC @ 4.5V

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Radiation Hardening :

No

Terminal Position :

Dual

FET Type :

N-Channel

Power Dissipation-Max :

540mW Ta

Pin Count :

3

Vgs (Max) :

±10V

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Mount :

Surface Mount

Factory Lead Time :

20 Weeks

Number of Elements :

1