RUM002N05T2L

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

15 ns

Terminal Form :

Flat

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Operating Temperature :

150°C TJ

Number of Elements :

1

Drain to Source Breakdown Voltage :

50V

Power Dissipation :

150mW

JESD-609 Code :

e2

Turn On Delay Time :

4 ns

Vgs (Max) :

±8V

Package / Case :

SOT-723

Terminal Finish :

Tin/Copper (Sn/Cu)

Terminal Position :

Dual

Mounting Type :

Surface Mount

Published :

2010

Drive Voltage (Max Rds On,Min Rds On) :

1.2V 4.5V

Number of Terminations :

3

Number of Pins :

3

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

2.2 Ω @ 200mA, 4.5V

Current - Continuous Drain (Id) @ 25°C :

200mA Ta

Rise Time :

6ns

Gate to Source Voltage (Vgs) :

8V

Pbfree Code :

yes

Drain-source On Resistance-Max :

2.4Ohm

Fall Time (Typ) :

55 ns

Continuous Drain Current (ID) :

200mA

Radiation Hardening :

No

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) :

0.2A

Vgs(th) (Max) @ Id :

1V @ 1mA

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Mount :

Surface Mount

Power Dissipation-Max :

150mW Ta

Pin Count :

3

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

16 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

25pF @ 10V

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

10