RUM001L02T2CL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Channels :

1

ECCN Code :

EAR99

Terminal Position :

Dual

Power Dissipation-Max :

150mW Ta

Operating Temperature :

150°C TJ

Power Dissipation :

150mW

Package / Case :

SOT-723

Rds On (Max) @ Id, Vgs :

3.5 Ω @ 100mA, 4.5V

Factory Lead Time :

16 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

1.2V 4.5V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

100mA Ta

Contact Plating :

Tin

Gate to Source Voltage (Vgs) :

8V

Fall Time (Typ) :

38 ns

Configuration :

SINGLE WITH BUILT-IN DIODE AND RESISTOR

Drain-source On Resistance-Max :

4.2Ohm

Drain to Source Breakdown Voltage :

20V

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Vgs (Max) :

±8V

Turn On Delay Time :

5 ns

FET Type :

N-Channel

Published :

2012

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

3

Continuous Drain Current (ID) :

100mA

RoHS Status :

ROHS3 Compliant

Packaging :

Cut Tape (CT)

Mounting Type :

Surface Mount

Height :

550μm

Terminal Form :

Flat

Lead Free :

Lead Free

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

7.1pF @ 10V

Number of Elements :

1

Rise Time :

4ns

Vgs(th) (Max) @ Id :

1V @ 100µA

Turn-Off Delay Time :

20 ns

Max Junction Temperature (Tj) :

150°C