RUM002N02T2L

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e2

Operating Mode :

ENHANCEMENT MODE

Rise Time :

10ns

Factory Lead Time :

16 Weeks

Current - Continuous Drain (Id) @ 25°C :

200mA Ta

Lead Free :

Lead Free

Number of Pins :

3

Transistor Application :

SWITCHING

Mount :

Surface Mount

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

0.2A

Peak Reflow Temperature (Cel) :

260

Drain to Source Breakdown Voltage :

20V

Terminal Finish :

Tin/Copper (Sn/Cu)

Fall Time (Typ) :

10 ns

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

1.2V 2.5V

Terminal Position :

Dual

Power Dissipation :

150mW

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

8V

Power Dissipation-Max :

150mW Ta

Drain-source On Resistance-Max :

1.4Ohm

Vgs (Max) :

±8V

Input Capacitance (Ciss) (Max) @ Vds :

25pF @ 10V

Operating Temperature :

150°C TJ

Terminal Form :

Flat

Time@Peak Reflow Temperature-Max (s) :

10

Contact Plating :

Copper, Tin

Number of Terminations :

3

Published :

2009

Vgs(th) (Max) @ Id :

1V @ 1mA

Turn-Off Delay Time :

15 ns

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

SOT-723

ECCN Code :

EAR99

Radiation Hardening :

No

Continuous Drain Current (ID) :

200mA

Pin Count :

3

Turn On Delay Time :

5 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 200mA, 2.5V

FET Type :

N-Channel