RUF025N02TL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

1999

JESD-609 Code :

e2

Rds On (Max) @ Id, Vgs :

54m Ω @ 2.5A, 4.5V

Operating Temperature :

150°C TJ

Continuous Drain Current (ID) :

2.5A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

820μm

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

20V

Fall Time (Typ) :

15 ns

Number of Elements :

1

Number of Terminations :

3

Factory Lead Time :

16 Weeks

REACH SVHC :

No SVHC

Peak Reflow Temperature (Cel) :

260

Current - Continuous Drain (Id) @ 25°C :

2.5A Ta

Width :

1.8mm

Gate Charge (Qg) (Max) @ Vgs :

5nC @ 4.5V

Power Dissipation :

800mW

Rise Time :

15ns

Turn-Off Delay Time :

35 ns

Time@Peak Reflow Temperature-Max (s) :

10

Nominal Vgs :

300 mV

Length :

2.1mm

Gate to Source Voltage (Vgs) :

10V

Power Dissipation-Max :

320mW Ta

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Element Configuration :

Single

Package / Case :

3-SMD, Flat Lead

Threshold Voltage :

300mV

Drain-source On Resistance-Max :

0.068Ohm

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Pbfree Code :

yes

Terminal Finish :

TIN COPPER

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

370pF @ 10V

Vgs (Max) :

±10V

Turn On Delay Time :

7 ns

Number of Pins :

3

Terminal Position :

Dual

Pin Count :

3

Vgs(th) (Max) @ Id :

1.3V @ 1mA

Mount :

Surface Mount