RUF020N02TL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Radiation Hardening :

No

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

105m Ω @ 2A, 4.5V

Drain to Source Voltage (Vdss) :

20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Pbfree Code :

yes

Power Dissipation-Max :

320mW Ta

Mount :

Surface Mount

DS Breakdown Voltage-Min :

20V

JESD-609 Code :

e2

Gate Charge (Qg) (Max) @ Vgs :

2nC @ 4.5V

Drain Current-Max (Abs) (ID) :

2A

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

180pF @ 10V

Vgs(th) (Max) @ Id :

1V @ 1mA

Gate to Source Voltage (Vgs) :

10V

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Published :

2013

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Terminal Position :

Dual

Transistor Application :

SWITCHING

Number of Elements :

1

FET Type :

N-Channel

Vgs (Max) :

±10V

Pin Count :

3

Fall Time (Typ) :

30 ns

Time@Peak Reflow Temperature-Max (s) :

10

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Package / Case :

3-SMD, Flat Lead

Terminal Finish :

Tin/Copper (Sn/Cu)

Turn-Off Delay Time :

30 ns

Factory Lead Time :

16 Weeks

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

150°C TJ

Number of Pins :

3

Turn On Delay Time :

6 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

2A

Current - Continuous Drain (Id) @ 25°C :

2A Ta

Rise Time :

17ns