RUF015N02TL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

10

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

JESD-609 Code :

e2

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Pin Count :

3

Terminal Finish :

TIN COPPER

Turn-Off Delay Time :

20 ns

Drain to Source Breakdown Voltage :

20V

FET Type :

N-Channel

Terminal Position :

Dual

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

3

Turn On Delay Time :

5 ns

Input Capacitance (Ciss) (Max) @ Vds :

110pF @ 10V

Factory Lead Time :

16 Weeks

Lead Free :

Lead Free

Pbfree Code :

yes

Continuous Drain Current (ID) :

1.5A

Element Configuration :

Single

Fall Time (Typ) :

3 ns

Radiation Hardening :

No

REACH SVHC :

No SVHC

Width :

1.7mm

Rds On (Max) @ Id, Vgs :

180m Ω @ 1.5A, 4.5V

Vgs(th) (Max) @ Id :

1V @ 1mA

Length :

2mm

Power Dissipation-Max :

800mW Ta

Transistor Element Material :

SILICON

Rise Time :

5ns

Resistance :

180mOhm

Number of Elements :

1

Operating Temperature :

150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

ECCN Code :

EAR99

Number of Terminations :

3

Transistor Application :

SWITCHING

Power Dissipation :

800mW

Published :

2007

Gate Charge (Qg) (Max) @ Vgs :

2.5nC @ 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

3-SMD, Flat Lead

Height :

770μm

Current - Continuous Drain (Id) @ 25°C :

1.5A Ta

Vgs (Max) :

±10V

Gate to Source Voltage (Vgs) :

10V

Mount :

Surface Mount