RU1L002SNTL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 10V

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

18 ns

ECCN Code :

EAR99

Transistor Element Material :

SILICON

FET Type :

N-Channel

Package / Case :

SC-85

Drain to Source Voltage (Vdss) :

60V

Number of Terminations :

3

Mount :

Surface Mount

Packaging :

Digi-Reel®

Drain Current-Max (Abs) (ID) :

0.25A

Operating Temperature :

150°C TJ

Gate to Source Voltage (Vgs) :

20V

Terminal Form :

Flat

Input Capacitance (Ciss) (Max) @ Vds :

15pF @ 25V

Vgs(th) (Max) @ Id :

2.3V @ 1mA

Radiation Hardening :

No

Turn On Delay Time :

3.5 ns

Rds On (Max) @ Id, Vgs :

2.4 Ω @ 250mA, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

250mA

Terminal Position :

Dual

Power Dissipation-Max :

200mW Ta

Rise Time :

5ns

Number of Pins :

3

Published :

2011

RoHS Status :

RoHS Compliant

DS Breakdown Voltage-Min :

60V

Fall Time (Typ) :

28 ns

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

250mA Ta