RTM002P02T2L
- Mfr.Part #
- RTM002P02T2L
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SOT-723
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 200MA VMT3
- Stock
- 17,534
- In Stock :
- 17,534
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 200mA Ta
- Pin Count :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Drain Current-Max (Abs) (ID) :
- 0.2A
- Packaging :
- Tape and Reel (TR)
- Element Configuration :
- Single
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 12V
- FET Type :
- P-Channel
- Continuous Drain Current (ID) :
- 200mA
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Nominal Vgs :
- -700 mV
- Terminal Position :
- Dual
- Transistor Application :
- SWITCHING
- Current Rating :
- -200mA
- RoHS Status :
- ROHS3 Compliant
- Turn On Delay Time :
- 9 ns
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Element Material :
- SILICON
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Input Capacitance (Ciss) (Max) @ Vds :
- 50pF @ 10V
- Voltage - Rated DC :
- -20V
- Number of Elements :
- 1
- Threshold Voltage :
- -700mV
- Published :
- 2006
- Rds On (Max) @ Id, Vgs :
- 1.5 Ω @ 200mA, 4.5V
- Drain to Source Voltage (Vdss) :
- 20V
- REACH SVHC :
- No SVHC
- Power Dissipation-Max :
- 150mW Ta
- Fall Time (Typ) :
- 6 ns
- Turn-Off Delay Time :
- 35 ns
- Resistance :
- 1.5Ohm
- Radiation Hardening :
- No
- Terminal Form :
- Flat
- Vgs(th) (Max) @ Id :
- 2V @ 1mA
- Rise Time :
- 6ns
- Package / Case :
- SOT-723
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Vgs (Max) :
- ±12V
- Number of Terminations :
- 3
- Power Dissipation :
- 150mW
- Drain to Source Breakdown Voltage :
- -20V
- Datasheets
- RTM002P02T2L

P-Channel Tape & Reel (TR) 1.5 Ω @ 200mA, 4.5V ±12V 50pF @ 10V 20V SOT-723
RTM002P02T2L Overview
A device's maximum input capacitance is 50pF @ 10V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 200mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=-20V, and this device has a drain-to-source breakdown voltage of -20V voltage.Its drain current is 0.2A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 35 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 9 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 12V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of -700mV.To operate this transistor, you need to apply a 20V drain to source voltage (Vdss).This device uses no drive voltage (2.5V 4.5V) to reduce its overall power consumption.
RTM002P02T2L Features
a continuous drain current (ID) of 200mA
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 35 ns
a threshold voltage of -700mV
a 20V drain to source voltage (Vdss)
RTM002P02T2L Applications
There are a lot of ROHM Semiconductor
RTM002P02T2L applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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