RT1C060UNTR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Contact Plating :

Tin

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

6A

Package / Case :

8-SMD, Flat Lead

ECCN Code :

EAR99

Factory Lead Time :

10 Weeks

Packaging :

Cut Tape (CT)

Rds On (Max) @ Id, Vgs :

28m Ω @ 6A, 4.5V

Vgs (Max) :

±10V

Pin Count :

8

Rise Time :

30ns

Mount :

Surface Mount

Drain Current-Max (Abs) (ID) :

6A

Drain to Source Voltage (Vdss) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

8

Operating Temperature :

150°C TJ

Qualification Status :

Not Qualified

Power Dissipation-Max :

650mW Ta

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 4.5V

Pulsed Drain Current-Max (IDM) :

24A

Published :

2010

Terminal Position :

Dual

JESD-30 Code :

R-PDSO-F8

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

1V @ 1mA

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate to Source Voltage (Vgs) :

10V

Current - Continuous Drain (Id) @ 25°C :

6A Ta

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

870pF @ 10V

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

20V

Drain-source On Resistance-Max :

0.033Ohm

Number of Elements :

1