RSL020P03TR
- Mfr.Part #
- RSL020P03TR
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 6-SMD, Flat Leads
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 2A TUMT6
- Stock
- 26,109
- In Stock :
- 26,109
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- ROHS3 Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 350pF @ 10V
- Number of Terminations :
- 6
- Packaging :
- Tape and Reel (TR)
- Continuous Drain Current (ID) :
- 2A
- Current - Continuous Drain (Id) @ 25°C :
- 2A Ta
- Factory Lead Time :
- 20 Weeks
- Operating Mode :
- ENHANCEMENT MODE
- Min Operating Temperature :
- -55°C
- Terminal Finish :
- TIN COPPER
- Power Dissipation :
- 1W
- Rise Time :
- 11ns
- JESD-609 Code :
- e2
- Fall Time (Typ) :
- 11 ns
- Drain to Source Breakdown Voltage :
- -30V
- Drain-source On Resistance-Max :
- 0.12Ohm
- Vgs (Max) :
- ±20V
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Gate to Source Voltage (Vgs) :
- 20V
- Drain Current-Max (Abs) (ID) :
- 2A
- Mount :
- Surface Mount
- Published :
- 2007
- Turn-Off Delay Time :
- 35 ns
- Number of Elements :
- 1
- Power Dissipation-Max :
- 1W Ta
- Terminal Position :
- Dual
- Pin Count :
- 6
- Rds On (Max) @ Id, Vgs :
- 120m Ω @ 2A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 3.9nC @ 5V
- Max Operating Temperature :
- 150°C
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 6
- Peak Reflow Temperature (Cel) :
- 260
- Package / Case :
- 6-SMD, Flat Leads
- FET Type :
- P-Channel
- Turn On Delay Time :
- 11 ns
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- Drain to Source Voltage (Vdss) :
- 30V
- Datasheets
- RSL020P03TR

P-Channel Tape & Reel (TR) 120m Ω @ 2A, 10V ±20V 350pF @ 10V 3.9nC @ 5V 30V 6-SMD, Flat Leads
RSL020P03TR Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 350pF @ 10V.This device conducts a continuous drain current (ID) of 2A, which is the maximum continuous current transistor can conduct.Using VGS=-30V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of -30V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 2A.When the device is turned off, a turn-off delay time of 35 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 11 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 30V.In order to reduce power consumption, this device uses a drive voltage of 4V 10V volts (4V 10V).
RSL020P03TR Features
a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 35 ns
a 30V drain to source voltage (Vdss)
RSL020P03TR Applications
There are a lot of ROHM Semiconductor
RSL020P03TR applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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