RSJ650N10TL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

65A Ta

FET Type :

N-Channel

Mount :

Surface Mount

Drain-source On Resistance-Max :

0.0098Ohm

Rds On (Max) @ Id, Vgs :

9.1m Ω @ 32.5A, 10V

Mounting Type :

Surface Mount

Turn-Off Delay Time :

640 ns

Transistor Element Material :

SILICON

Published :

2011

Lead Free :

Lead Free

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

83

Factory Lead Time :

20 Weeks

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

JESD-30 Code :

R-PSSO-G2

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

10780pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Terminal Position :

Single

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Number of Terminations :

2

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

45 ns

Pulsed Drain Current-Max (IDM) :

130A

Pin Count :

3

Fall Time (Typ) :

480 ns

ECCN Code :

EAR99

Power Dissipation-Max :

100W Tc

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

100V

Operating Temperature :

150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Drain to Source Voltage (Vdss) :

100V

Rise Time :

170ns

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

65A

Gate Charge (Qg) (Max) @ Vgs :

260nC @ 10V

Gate to Source Voltage (Vgs) :

20V