RSJ300N10TL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

83

Turn On Delay Time :

20 ns

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

2200pF @ 25V

Operating Temperature :

150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

Width :

9mm

Vgs (Max) :

±20V

Power Dissipation-Max :

50W Tc

Fall Time (Typ) :

180 ns

Pulsed Drain Current-Max (IDM) :

60A

Number of Channels :

1

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Rise Time :

65ns

Turn-Off Delay Time :

130 ns

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

30A Ta

JESD-30 Code :

R-PSSO-G2

Element Configuration :

Single

Published :

2011

Continuous Drain Current (ID) :

30A

Rds On (Max) @ Id, Vgs :

52m Ω @ 15A, 10V

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Number of Terminations :

2

Drain to Source Voltage (Vdss) :

100V

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Form :

Gull wing

Mount :

Surface Mount

Number of Elements :

1

Radiation Hardening :

No

ECCN Code :

EAR99

Height :

4.5mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Drain-source On Resistance-Max :

0.059Ohm

Length :

10.1mm