RSJ250P10TL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Number of Elements :

1

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

25A Ta

Pin Count :

3

Input Capacitance (Ciss) (Max) @ Vds :

8000pF @ 25V

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Packaging :

Tape and Reel (TR)

Number of Channels :

1

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Position :

Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Breakdown Voltage :

-100V

FET Type :

P-Channel

Number of Pins :

83

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

67ns

Radiation Hardening :

No

Mount :

Surface Mount

Factory Lead Time :

20 Weeks

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Operating Temperature :

150°C TJ

Gate to Source Voltage (Vgs) :

20V

Drain-source On Resistance-Max :

0.063Ohm

Terminal Form :

Gull wing

Number of Terminations :

2

Turn-Off Delay Time :

310 ns

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Power Dissipation-Max :

50W Tc

Rds On (Max) @ Id, Vgs :

63m Ω @ 25A, 10V

Pulsed Drain Current-Max (IDM) :

50A

JESD-30 Code :

R-PSSO-G2

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

180 ns

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

25A

Published :

2011

Drain to Source Voltage (Vdss) :

100V

Turn On Delay Time :

30 ns