RSJ151P10TL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

P-Channel

Power Dissipation-Max :

1.35W Ta 50W Tc

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Factory Lead Time :

20 Weeks

Current - Continuous Drain (Id) @ 25°C :

15A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

2

Rds On (Max) @ Id, Vgs :

120m Ω @ 15A, 10V

Reach Compliance Code :

not_compliant

DS Breakdown Voltage-Min :

100V

JESD-30 Code :

R-PSSO-G2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

3800pF @ 25V

Drain to Source Voltage (Vdss) :

100V

Number of Pins :

83

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.14Ohm

Operating Temperature :

150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Avalanche Energy Rating (Eas) :

33 mJ

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Pulsed Drain Current-Max (IDM) :

30A

Packaging :

Cut Tape (CT)

Mount :

Surface Mount

Continuous Drain Current (ID) :

15A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

EAR99

Terminal Form :

Gull wing

Published :

2013

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

64nC @ 10V

Terminal Position :

Single