RS1G300GNTB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

4230pF @ 20V

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Dual

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Pins :

8

Drain to Source Voltage (Vdss) :

40V

Reach Compliance Code :

not_compliant

Operating Temperature :

150°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Cut Tape (CT)

Rds On (Max) @ Id, Vgs :

2.5m Ω @ 30A, 10V

JESD-30 Code :

R-PDSO-F5

Vgs(th) (Max) @ Id :

2.5V @ 1mA

DS Breakdown Voltage-Min :

40V

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN DIODE

Continuous Drain Current (ID) :

30A

Number of Elements :

1

Number of Terminations :

5

Package / Case :

8-PowerTDFN

Transistor Element Material :

SILICON

Factory Lead Time :

20 Weeks

Terminal Form :

Flat

Pulsed Drain Current-Max (IDM) :

120A

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

30A Ta

Avalanche Energy Rating (Eas) :

136 mJ

Published :

2014

Drain-source On Resistance-Max :

0.003Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

3W Ta 35W Tc

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

56.8nC @ 10V

FET Type :

N-Channel