RS1G260MNTB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

26A Ta

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Form :

Flat

Continuous Drain Current (ID) :

26A

DS Breakdown Voltage-Min :

40V

FET Type :

N-Channel

Published :

2015

Gate Charge (Qg) (Max) @ Vgs :

44nC @ 10V

Transistor Element Material :

SILICON

Terminal Position :

Dual

Number of Elements :

1

JESD-30 Code :

R-PDSO-F5

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

40V

Power Dissipation-Max :

3W Ta 35W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

8-PowerTDFN

Case Connection :

DRAIN

Factory Lead Time :

20 Weeks

Number of Pins :

8

Lead Free :

Lead Free

Packaging :

Cut Tape (CT)

Rds On (Max) @ Id, Vgs :

3.3m Ω @ 26A, 10V

Operating Temperature :

150°C TJ

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Pulsed Drain Current-Max (IDM) :

104A

Drain-source On Resistance-Max :

0.0044Ohm

Mounting Type :

Surface Mount

Number of Terminations :

5

Input Capacitance (Ciss) (Max) @ Vds :

2988pF @ 20V

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

NOT SPECIFIED