RRQ045P03TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

FET Type :

P-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

35m Ω @ 4.5A, 10V

Time@Peak Reflow Temperature-Max (s) :

10

Turn-Off Delay Time :

110 ns

Turn On Delay Time :

10 ns

Number of Elements :

1

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Resistance :

35mOhm

Pulsed Drain Current-Max (IDM) :

18A

Peak Reflow Temperature (Cel) :

260

Published :

2012

Transistor Application :

SWITCHING

JESD-609 Code :

e1

Power Dissipation-Max :

600mW Ta

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 5V

Vgs (Max) :

±20V

Terminal Form :

Gull wing

Number of Pins :

6

Power Dissipation :

1.25W

Terminal Position :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

1350pF @ 10V

Packaging :

Tape and Reel (TR)

Operating Temperature :

150°C TJ

ECCN Code :

EAR99

Continuous Drain Current (ID) :

4.5A

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

30V

Number of Terminations :

6

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Current - Continuous Drain (Id) @ 25°C :

4.5A Ta

Factory Lead Time :

20 Weeks

Drain to Source Breakdown Voltage :

-30V

Pin Count :

6

Fall Time (Typ) :

65 ns

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Rise Time :

35ns

Gate to Source Voltage (Vgs) :

20V

Element Configuration :

Single

Package / Case :

SOT-23-6 Thin, TSOT-23-6