RQ3C150BCTB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

5

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Pulsed Drain Current-Max (IDM) :

60A

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V

Rds On (Max) @ Id, Vgs :

6.7m Ω @ 15A, 4.5V

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 4.5V

Surface Mount :

yes

Terminal Form :

Flat

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

1.2V @ 1mA

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Factory Lead Time :

20 Weeks

Drain-source On Resistance-Max :

0.0085Ohm

JESD-30 Code :

S-PDSO-F5

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Package / Case :

8-PowerVDFN

Operating Temperature :

150°C TJ

Vgs (Max) :

±8V

Packaging :

Cut Tape (CT)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Dual

Drain Current-Max (Abs) (ID) :

15A

Drain to Source Voltage (Vdss) :

20V

Power Dissipation-Max :

20W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

P-Channel

DS Breakdown Voltage-Min :

20V

Avalanche Energy Rating (Eas) :

33 mJ

Input Capacitance (Ciss) (Max) @ Vds :

4800pF @ 10V