RQ1C075UNTR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2015

Continuous Drain Current (ID) :

7.5A

Package / Case :

8-SMD, Flat Lead

Input Capacitance (Ciss) (Max) @ Vds :

1400pF @ 10V

FET Type :

N-Channel

DS Breakdown Voltage-Min :

20V

Qualification Status :

Not Qualified

Pulsed Drain Current-Max (IDM) :

30A

Number of Terminations :

8

Drain to Source Voltage (Vdss) :

20V

Transistor Application :

SWITCHING

Packaging :

Cut Tape (CT)

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 4.5V

Vgs(th) (Max) @ Id :

1V @ 1mA

Current - Continuous Drain (Id) @ 25°C :

7.5A Ta

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

16m Ω @ 7.5A, 4.5V

Time@Peak Reflow Temperature-Max (s) :

10

Terminal Position :

Dual

Mounting Type :

Surface Mount

Power Dissipation-Max :

700mW Ta

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Pin Count :

8

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Vgs (Max) :

±10V

Operating Temperature :

150°C TJ

Terminal Finish :

Tin/Copper (Sn/Cu)

Mount :

Surface Mount

Factory Lead Time :

20 Weeks

JESD-30 Code :

R-PDSO-F8

JESD-609 Code :

e2

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

260

Drain-source On Resistance-Max :

0.02Ohm