RP1A090ZPTR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Terminal Finish :

TIN COPPER

Transistor Element Material :

SILICON

Number of Elements :

1

FET Type :

P-Channel

Drain to Source Breakdown Voltage :

-12V

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.012Ohm

Number of Pins :

6

Pin Count :

6

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

10

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

260

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

1V @ 1mA

Vgs (Max) :

±10V

Published :

2010

Rds On (Max) @ Id, Vgs :

12m Ω @ 9A, 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

7400pF @ 6V

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

9A

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e2

Mount :

Surface Mount

Power Dissipation :

2W

Operating Temperature :

150°C TJ

Current - Continuous Drain (Id) @ 25°C :

9A Ta

Qualification Status :

Not Qualified

Package / Case :

6-SMD, Flat Leads

Drain Current-Max (Abs) (ID) :

9A

Case Connection :

DRAIN

Power Dissipation-Max :

2W Ta

Gate Charge (Qg) (Max) @ Vgs :

59nC @ 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Drain to Source Voltage (Vdss) :

12V

Number of Terminations :

6