RN2505TE85LF

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA 5V

Radiation Hardening :

No

hFE Min :

80

Max Power Dissipation :

300mW

Mount :

Surface Mount

Max Operating Temperature :

150°C

Frequency - Transition :

200MHz

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

Published :

2010

Collector Emitter Voltage (VCEO) :

300mV

Packaging :

Cut Tape (CT)

Factory Lead Time :

11 Weeks

Polarity :

PNP

Max Collector Current :

100mA

Number of Pins :

5

Resistor - Base (R1) :

2.2k Ω

Package / Case :

SC-74A, SOT-753

Current - Collector Cutoff (Max) :

100nA ICBO

Emitter Base Voltage (VEBO) :

-5V

Min Operating Temperature :

-55°C

Transistor Type :

2 PNP - Pre-Biased (Dual) (Emitter Coupled)

RoHS Status :

RoHS Compliant

Resistor - Emitter Base (R2) :

47k Ω

Collector Emitter Breakdown Voltage :

50V

Element Configuration :

Dual

Continuous Collector Current :

-100mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Breakdown Voltage :

50V

Mounting Type :

Surface Mount