RN2422TE85LF

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Terminal Position :

Dual

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

RoHS Compliant

Max Power Dissipation :

200mW

Number of Elements :

1

Published :

2009

DC Current Gain (hFE) (Min) @ Ic, Vce :

65 @ 100mA 1V

Collector Emitter Breakdown Voltage :

50V

Resistor - Emitter Base (R2) :

2.2 k Ω

Frequency - Transition :

200MHz

Packaging :

Tape and Reel (TR)

Vce Saturation (Max) @ Ib, Ic :

250mV @ 1mA, 50mA

Mounting Type :

Surface Mount

Element Configuration :

Single

Transistor Application :

SWITCHING

Number of Terminations :

3

Max Operating Temperature :

150°C

Terminal Form :

Gull wing

Max Collector Current :

800mA

Transistor Type :

PNP - Pre-Biased

Transition Frequency :

200MHz

Radiation Hardening :

No

Min Operating Temperature :

-55°C

Current - Collector Cutoff (Max) :

500nA

Resistor - Base (R1) :

2.2 k Ω

Package / Case :

TO-236-3, SC-59, SOT-23-3

Collector Emitter Voltage (VCEO) :

250mV

Polarity/Channel Type :

PNP

Number of Pins :

3

Factory Lead Time :

12 Weeks

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1