RM12N650TI

Manufacturer :

Rectron USA

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation (Max) :

32.6W (Tc)

Supplier Device Package :

TO-220F

RoHS :

Y

Packaging :

Case - TO-220F

Drive Voltage (Max Rds On, Min Rds On) :

10V

Voltage :

Vdss - 650V

Drain to Source Voltage (Vdss) :

650 V

Mounting Type :

Through Hole

FET Feature :

-

Rds On (Max) @ Id, Vgs :

360mOhm @ 7A, 10V

Operating Temperature :

-55°C ~ 150°C (TJ)

Product Status :

Active

Vgs(th) (Max) @ Id :

4V @ 250µA

Vgs (Max) :

±30V

Package :

Tube

Package / Case :

TO-220-3 Full Pack

Current - Continuous Drain (Id) @ 25°C :

11.5A (Tc)

Input Capacitance (Ciss) (Max) @ Vds :

870 pF @ 50 V

FET Type :

N-Channel

Capacitance :

Input Capacitance (Ciss) - 1285pF

Series :

-

Manufacturer :

Rectron