RK3055ETL
- Mfr.Part #
- RK3055ETL
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 8A CPT3
- Stock
- 3,323
- In Stock :
- 3,323
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation :
- 20W
- Number of Elements :
- 1
- Reach Compliance Code :
- not_compliant
- Operating Temperature :
- 150°C TJ
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Operating Mode :
- ENHANCEMENT MODE
- Drain Current-Max (Abs) (ID) :
- 8A
- Voltage - Rated DC :
- 60V
- JESD-609 Code :
- e2
- Published :
- 2008
- Vgs(th) (Max) @ Id :
- 2.5V @ 1mA
- Number of Pins :
- 3
- Packaging :
- Tape and Reel (TR)
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- RoHS Status :
- ROHS3 Compliant
- Fall Time (Typ) :
- 20 ns
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Mounting Type :
- Surface Mount
- Drain-source On Resistance-Max :
- 0.15Ohm
- Transistor Application :
- SWITCHING
- Rise Time :
- 20ns
- Peak Reflow Temperature (Cel) :
- 260
- Nominal Vgs :
- 2.5 V
- Current - Continuous Drain (Id) @ 25°C :
- 8A Ta
- Rds On (Max) @ Id, Vgs :
- 150m Ω @ 4A, 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Terminal Form :
- Gull wing
- Turn-Off Delay Time :
- 50 ns
- Mount :
- Surface Mount
- Current Rating :
- 8A
- Terminal Finish :
- Tin/Copper (Sn98Cu2)
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Drain to Source Breakdown Voltage :
- 60V
- Power Dissipation-Max :
- 20W Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 520pF @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 8A
- Pulsed Drain Current-Max (IDM) :
- 20A
- Dual Supply Voltage :
- 60V
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Termination :
- SMD/SMT
- Qualification Status :
- Not Qualified
- JESD-30 Code :
- R-PSSO-G2
- REACH SVHC :
- No SVHC
- Number of Terminations :
- 2
- Vgs (Max) :
- ±20V
- Datasheets
- RK3055ETL

N-Channel Tape & Reel (TR) 150m Ω @ 4A, 10V ±20V 520pF @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
RK3055ETL Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 520pF @ 10V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 8A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=60V. And this device has 60V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 8A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 50 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 20A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.By using drive voltage (10V), this device helps reduce its overall power consumption.
RK3055ETL Features
a continuous drain current (ID) of 8A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 50 ns
based on its rated peak drain current 20A.
RK3055ETL Applications
There are a lot of ROHM Semiconductor
RK3055ETL applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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