RJ1G08CGNTLL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

35 mJ

Factory Lead Time :

16 Weeks

Drain Current-Max (Abs) (ID) :

80A

DS Breakdown Voltage-Min :

40V

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

5.6m Ω @ 80A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Packaging :

Cut Tape (CT)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Surface Mount :

yes

Drain-source On Resistance-Max :

0.0056Ohm

Current - Continuous Drain (Id) @ 25°C :

80A Ta

Gate Charge (Qg) (Max) @ Vgs :

31.1nC @ 10V

Mounting Type :

Surface Mount

Terminal Position :

Single

Number of Elements :

1

Case Connection :

DRAIN

Operating Temperature :

150°C TJ

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

2.5V @ 500μA

Number of Terminations :

2

Terminal Form :

Gull wing

JESD-30 Code :

R-PSSO-G2

Pulsed Drain Current-Max (IDM) :

160A

FET Type :

N-Channel

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Input Capacitance (Ciss) (Max) @ Vds :

2410pF @ 20V

Power Dissipation-Max :

78W Ta

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

40V

Transistor Element Material :

SILICON