RGW80TK65DGVC11

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - IGBTs - Single

Current - Collector (Ic) (Max) :

39A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Turn Off Time-Nom (toff) :

228 ns

RoHS Status :

ROHS3 Compliant

IGBT Type :

Trench Field Stop

Number of Elements :

1

Factory Lead Time :

17 Weeks

Td (on/off) @ 25°C :

44ns/143ns

Power - Max :

81W

Switching Energy :

760μJ (on), 720μJ (off)

Gate Charge :

110nC

Operating Temperature :

-40°C~175°C TJ

Polarity/Channel Type :

N-Channel

Voltage - Collector Emitter Breakdown (Max) :

650V

Surface Mount :

No

Terminal Position :

Single

Vce(on) (Max) @ Vge, Ic :

1.9V @ 15V, 40A

Case Connection :

Isolated

JESD-30 Code :

R-PSFM-T3

Transistor Element Material :

SILICON

Input Type :

Standard

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

TO-3PFM, SC-93-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

POWER CONTROL

Test Condition :

400V, 40A, 10 Ω, 15V

Turn On Time :

59 ns

Reverse Recovery Time :

92ns

Current - Collector Pulsed (Icm) :

160A

Number of Terminations :

3