RGW80TS65EHRC11

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - IGBTs - Single

Power Dissipation :

214W

Channel Type :

N

Series :

-

Minimum Operating Temperature :

- 40 C

Input Type :

Standard

IGBT Type :

Trench Field Stop

Supplier Device Package :

TO-247N

Mounting Style :

Through Hole

Power - Max :

214 W

Package Type :

TO-247N

Pin Count :

3

Package :

Tube

Product Status :

Active

Operating Temperature :

-40°C ~ 175°C (TJ)

Reverse Recovery Time (trr) :

86 ns

Packaging :

Tube

Td (on/off) @ 25°C :

43ns/148ns

Continuous Collector Current :

80A

Vce(on) (Max) @ Vge, Ic :

1.9V @ 15V, 40A

Test Condition :

400V, 20A, 10Ohm, 15V

Configuration :

Single

Voltage - Collector Emitter Breakdown (Max) :

650 V

Gate Charge :

110 nC

Maximum Operating Temperature :

+ 175 C

Subcategory :

IGBTs

Product Category :

IGBT Transistors

Package / Case :

TO-247-3

Current - Collector (Ic) (Max) :

80 A

Mounting Type :

Through Hole

Technology :

Si

Collector Emitter Saturation Voltage :

1.5V

Product Type :

IGBT Transistors

Current - Collector Pulsed (Icm) :

160 A

RoHS :

Details

Manufacturer :

Rohm Semiconductor

Brand :

Rohm Semiconductor