RGW60TS65DGC11

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - IGBTs - Single

Transistor Application :

POWER CONTROL

Polarity/Channel Type :

N-Channel

Turn On Time :

50 ns

Current - Collector (Ic) (Max) :

60A

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Single

RoHS Status :

ROHS3 Compliant

Surface Mount :

No

Voltage - Collector Emitter Breakdown (Max) :

650V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Test Condition :

400V, 30A, 10 Ω, 15V

IGBT Type :

Trench Field Stop

Gate Charge :

84nC

Current - Collector Pulsed (Icm) :

120A

Number of Elements :

1

Transistor Element Material :

SILICON

Reverse Recovery Time :

92ns

Input Type :

Standard

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Power - Max :

178W

Operating Temperature :

-40°C~175°C TJ

JESD-30 Code :

R-PSFM-T3

Mounting Type :

Through Hole

Td (on/off) @ 25°C :

37ns/114ns

Factory Lead Time :

17 Weeks

Turn Off Time-Nom (toff) :

209 ns

Package / Case :

TO-247-3

Switching Energy :

480μJ (on), 490μJ (off)

Vce(on) (Max) @ Vge, Ic :

1.9V @ 15V, 30A