RGW60TK65GVC11

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - IGBTs - Single

IGBT Type :

Trench Field Stop

Factory Lead Time :

17 Weeks

Switching Energy :

480μJ (on), 490μJ (off)

Terminal Position :

Single

Current - Collector (Ic) (Max) :

33A

Operating Temperature :

-40°C~175°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Case Connection :

Isolated

JESD-30 Code :

R-PSFM-T3

Gate Charge :

84nC

Polarity/Channel Type :

N-Channel

Current - Collector Pulsed (Icm) :

120A

Input Type :

Standard

Package / Case :

TO-3PFM, SC-93-3

Vce(on) (Max) @ Vge, Ic :

1.9V @ 15V, 30A

RoHS Status :

ROHS3 Compliant

Test Condition :

400V, 30A, 10 Ω, 15V

Power - Max :

72W

Voltage - Collector Emitter Breakdown (Max) :

650V

Configuration :

Single

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

3

Td (on/off) @ 25°C :

37ns/114ns

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

No

Turn On Time :

50 ns

Transistor Application :

POWER CONTROL

Turn Off Time-Nom (toff) :

209 ns

Number of Elements :

1