RGT30TM65DGC9

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - IGBTs - Single

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 15A

Turn On Time :

40 ns

Power - Max :

32W

Transistor Element Material :

SILICON

Factory Lead Time :

17 Weeks

Current - Collector Pulsed (Icm) :

45A

Voltage - Collector Emitter Breakdown (Max) :

650V

Package / Case :

TO-220-3 Full Pack

JEDEC-95 Code :

TO-220AB

RoHS Status :

ROHS3 Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Turn Off Time-Nom (toff) :

204 ns

Operating Temperature :

-40°C~175°C TJ

Terminal Position :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

3

Surface Mount :

No

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge :

32nC

Reverse Recovery Time :

55ns

Polarity/Channel Type :

N-Channel

Test Condition :

400V, 15A, 10 Ω, 15V

JESD-30 Code :

R-PSFM-T3

IGBT Type :

Trench Field Stop

Input Type :

Standard

Number of Elements :

1

Transistor Application :

POWER CONTROL

Td (on/off) @ 25°C :

18ns/64ns

Current - Collector (Ic) (Max) :

14A

Case Connection :

Isolated