RGT30NL65DGTL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - IGBTs - Single

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 15A

Current - Collector Pulsed (Icm) :

45A

Test Condition :

400V, 15A, 10 Ω, 15V

Configuration :

SINGLE WITH BUILT-IN DIODE

Polarity/Channel Type :

N-Channel

Surface Mount :

yes

Factory Lead Time :

17 Weeks

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Td (on/off) @ 25°C :

18ns/64ns

Voltage - Collector Emitter Breakdown (Max) :

650V

Number of Elements :

1

JESD-30 Code :

R-PSSO-G2

Power - Max :

133W

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Turn Off Time-Nom (toff) :

204 ns

Packaging :

Tape and Reel (TR)

Terminal Position :

Single

IGBT Type :

Trench Field Stop

Reverse Recovery Time :

55ns

Terminal Form :

Gull wing

Input Type :

Standard

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Turn On Time :

40 ns

Current - Collector (Ic) (Max) :

30A

Gate Charge :

32nC

Operating Temperature :

-40°C~175°C TJ

Case Connection :

COLLECTOR

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

POWER CONTROL

Number of Terminations :

2