RFP50N06
- Mfr.Part #
- RFP50N06
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 50A TO220-3
- Stock
- 1,322
- In Stock :
- 1,322
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Mode :
- ENHANCEMENT MODE
- Reach Compliance Code :
- Unknown
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Current - Continuous Drain (Id) @ 25°C :
- 50A Tc
- Drain to Source Voltage (Vdss) :
- 60V
- Transistor Element Material :
- SILICON
- Drain-source On Resistance-Max :
- 0.022Ohm
- Vgs (Max) :
- ±20V
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Qualification Status :
- COMMERCIAL
- DS Breakdown Voltage-Min :
- 60V
- JESD-30 Code :
- R-PSFM-T3
- RoHS Status :
- Non-RoHS Compliant
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Package / Case :
- TO-220-3
- Gate Charge (Qg) (Max) @ Vgs :
- 150nC @ 20V
- Terminal Position :
- Single
- Packaging :
- Tube
- Drain Current-Max (Abs) (ID) :
- 50A
- JEDEC-95 Code :
- TO-220AB
- Transistor Application :
- SWITCHING
- Pbfree Code :
- No
- JESD-609 Code :
- e0
- Rds On (Max) @ Id, Vgs :
- 22m Ω @ 50A, 10V
- Operating Temperature :
- -55°C~175°C TJ
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Number of Terminations :
- 3
- Terminal Finish :
- TIN LEAD
- Power Dissipation-Max :
- 131W Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 2.02pF @ 25V
- Case Connection :
- DRAIN
- Mounting Type :
- Through Hole
- Surface Mount :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- RFP50N06

N-Channel Tube 22m Ω @ 50A, 10V ±20V 2.02pF @ 25V 150nC @ 20V 60V TO-220-3
RFP50N06 Overview
A device's maximal input capacitance is 2.02pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 50A, which is the maximum continuous current the device can conduct.To maintain normal operation, it is recommended that the DS breakdown voltage be above 60V.This transistor requires a 60V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
RFP50N06 Features
a 60V drain to source voltage (Vdss)
RFP50N06 Applications
There are a lot of Rochester Electronics, LLC
RFP50N06 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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