RFP50N06
- Mfr.Part #
- RFP50N06
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 50A TO220-3
- Stock
- 1,322
- In Stock :
- 1,322
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 50A Tc
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- FET Type :
- N-Channel
- Drain-source On Resistance-Max :
- 0.022Ohm
- Transistor Application :
- SWITCHING
- Input Capacitance (Ciss) (Max) @ Vds :
- 2.02pF @ 25V
- Terminal Position :
- Single
- Package / Case :
- TO-220-3
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Case Connection :
- DRAIN
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Surface Mount :
- No
- Gate Charge (Qg) (Max) @ Vgs :
- 150nC @ 20V
- RoHS Status :
- Non-RoHS Compliant
- Operating Temperature :
- -55°C~175°C TJ
- JESD-609 Code :
- e0
- JESD-30 Code :
- R-PSFM-T3
- JEDEC-95 Code :
- TO-220AB
- Operating Mode :
- ENHANCEMENT MODE
- Drain Current-Max (Abs) (ID) :
- 50A
- Packaging :
- Tube
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DS Breakdown Voltage-Min :
- 60V
- Rds On (Max) @ Id, Vgs :
- 22m Ω @ 50A, 10V
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Power Dissipation-Max :
- 131W Tc
- Qualification Status :
- COMMERCIAL
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pbfree Code :
- No
- Vgs (Max) :
- ±20V
- Reach Compliance Code :
- Unknown
- Terminal Finish :
- TIN LEAD
- Drain to Source Voltage (Vdss) :
- 60V
- Mounting Type :
- Through Hole
- Datasheets
- RFP50N06
RFP50N06 Documents

N-Channel Tube 22m Ω @ 50A, 10V ±20V 2.02pF @ 25V 150nC @ 20V 60V TO-220-3
RFP50N06 Overview
A device's maximal input capacitance is 2.02pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 50A, which is the maximum continuous current the device can conduct.To maintain normal operation, it is recommended that the DS breakdown voltage be above 60V.This transistor requires a 60V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
RFP50N06 Features
a 60V drain to source voltage (Vdss)
RFP50N06 Applications
There are a lot of Rochester Electronics, LLC
RFP50N06 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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