RFP50N05

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Mfr.Part #
RFP50N05
Manufacturer
Harris Corporation
Package / Case
TO-220-3
Datasheet
Download
Description
N-CHANNEL POWER MOSFET
Stock
2,400
In Stock :
2,400

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Manufacturer :
Harris Corporation
Product Category :
Transistors - FETs, MOSFETs - Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
FET Type :
N-Channel
Drain to Source Voltage (Vdss) :
50V
Mounting Type :
Through Hole
Power Dissipation-Max :
110W Tc
Package / Case :
TO-220-3
Packaging :
Tube
Supplier Device Package :
TO-220-3
Published :
2004
Current - Continuous Drain (Id) @ 25°C :
50A Tc
Drive Voltage (Max Rds On,Min Rds On) :
4V 5V
Rds On (Max) @ Id, Vgs :
22mOhm @ 50A, 5V
Vgs (Max) :
±10V
Vgs(th) (Max) @ Id :
2V @ 250μA
Gate Charge (Qg) (Max) @ Vgs :
140nC @ 10V
Operating Temperature :
-55°C~150°C TJ
Datasheets
RFP50N05
Introducing Transistors - FETs, MOSFETs - Single Harris Corporation RFP50N05 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-220-3, Operating Temperature:-55°C~150°C TJ, RFP50N05 pinout, RFP50N05 datasheet PDF, RFP50N05 amp .Beyond Transistors - FETs, MOSFETs - Single Harris Corporation RFP50N05 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



N-Channel Tube 22mOhm @ 50A, 5V ±10V 140nC @ 10V 50V TO-220-3

RFP50N05L  Description


The RFP50N06 is an N-Channel power MOSFET manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. 



RFP50N05L  Features


  • Peak Current vs Pulse Width Curve

  • UIS Rating Curve

  • 175°C Operating Temperature

  • 50A, 60V

  • rDS(ON)= 0.022Ω

  • Temperature Compensating PSPICE Model



RFP50N05L Applications


  • Other Industrial


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