RFP50N06

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

50A Tc

DS Breakdown Voltage-Min :

60V

RoHS Status :

Non-RoHS Compliant

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 20V

Surface Mount :

No

Terminal Position :

Single

Terminal Finish :

TIN LEAD

Drain to Source Voltage (Vdss) :

60V

Number of Elements :

1

Operating Temperature :

-55°C~175°C TJ

JEDEC-95 Code :

TO-220AB

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Power Dissipation-Max :

131W Tc

JESD-30 Code :

R-PSFM-T3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

22m Ω @ 50A, 10V

Qualification Status :

COMMERCIAL

Package / Case :

TO-220-3

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tube

Pbfree Code :

No

Operating Mode :

ENHANCEMENT MODE

Reach Compliance Code :

Unknown

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

50A

Drain-source On Resistance-Max :

0.022Ohm

Input Capacitance (Ciss) (Max) @ Vds :

2.02pF @ 25V

Vgs(th) (Max) @ Id :

4V @ 250µA

JESD-609 Code :

e0

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING