RFP2N10L
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- Mfr.Part #
- RFP2N10L
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 2A TO220-3
- Stock
- 7,934
- In Stock ：
- 7,934
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-220-3
- RoHS Status :
- Non-RoHS Compliant
- Mounting Type :
- Through Hole
- Supplier Device Package :
- TO-220-3
- Vgs (Max) :
- ±10V
- Power Dissipation-Max :
- 25W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V
- Rds On (Max) @ Id, Vgs :
- 1.05Ohm @ 2A, 5V
- Operating Temperature :
- -55°C~150°C TJ
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- FET Type :
- N-Channel
- Packaging :
- Tube
- Drain to Source Voltage (Vdss) :
- 100V
- Current - Continuous Drain (Id) @ 25°C :
- 2A Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 200pF @ 25V
- Datasheets
- RFP2N10L
N-Channel Tube 1.05Ohm @ 2A, 5V ±10V 200pF @ 25V 100V TO-220-3
RFP2N10L Description
The RFP2N10L is an N-Channel enhancement mode silicon gate power field effect transistor specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers.
RFP2N10L Features
-
Can be Driven Directly from QMOS, NMOS, and TTL Circuits
-
Compatible with Automotive Drive Requirements
-
SOA is Power Dissipation Limited
-
Nanosecond Switching Speeds
-
Linear Transfer Characteristics
-
High Input Impedance
-
Majority Carrier Device
-
2A, 80V and 100V
-
rDS(ON) = 1.050
-
Design Optimized for 5V Gate Drives
RFP2N10L Applications
-
Programmable controllers
-
Automotive switching
-
Solenoid drivers
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