RFP2N10
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- Mfr.Part #
- RFP2N10
- Manufacturer
- Harris Corporation
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- N-CHANNEL, MOSFET
- Stock
- 1,323
- In Stock ：
- 1,323
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- Manufacturer :
- Harris Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 200pF @ 25V
- RoHS Status :
- Non-RoHS Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Supplier Device Package :
- TO-220-3
- Package / Case :
- TO-220-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- Rds On (Max) @ Id, Vgs :
- 1.05Ohm @ 2A, 5V
- Drain to Source Voltage (Vdss) :
- 100V
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V
- Power Dissipation-Max :
- 25W Tc
- Current - Continuous Drain (Id) @ 25°C :
- 2A Tc
- Mounting Type :
- Through Hole
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Datasheets
- RFP2N10
N-Channel Tube 1.05Ohm @ 2A, 5V ±10V 200pF @ 25V 100V TO-220-3
RFP2N10L Description
The RFP2N10L is an N-Channel enhancement mode silicon gate power field effect transistor specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers.
RFP2N10L Features
-
Can be Driven Directly from QMOS, NMOS, and TTL Circuits
-
Compatible with Automotive Drive Requirements
-
SOA is Power Dissipation Limited
-
Nanosecond Switching Speeds
-
Linear Transfer Characteristics
-
High Input Impedance
-
Majority Carrier Device
-
2A, 80V and 100V
-
rDS(ON) = 1.050
-
Design Optimized for 5V Gate Drives
RFP2N10L Applications
-
Programmable controllers
-
Automotive switching
-
Solenoid drivers
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