RFP22N10
- Mfr.Part #
- RFP22N10
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 22A TO220-3
- Stock
- 1,380
- In Stock :
- 1,380
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Published :
- 2002
- Vgs (Max) :
- ±20V
- Rds On (Max) @ Id, Vgs :
- 80mOhm @ 22A, 10V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Package / Case :
- TO-220-3
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 22A Tc
- Power Dissipation-Max :
- 100W Tc
- Drain to Source Voltage (Vdss) :
- 100V
- Operating Temperature :
- -55°C~175°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 150nC @ 20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Packaging :
- Tube
- Supplier Device Package :
- TO-220-3
- Datasheets
- RFP22N10

N-Channel Tube 80mOhm @ 22A, 10V ±20V 150nC @ 20V 100V TO-220-3
RFP22N10 Description
The RFP22N10 is an N-Channel enhancement mode silicon gate power field effect transistor intended primarily for use with logic level (5V) driving sources in applications such as programmable controllers, automobile switching, and solenoid drivers. This capability is achieved using a unique gate oxide design that delivers full-rated conduction at gate biases ranging from 3V to 5V, allowing genuine on-off power management straight from logic circuit supply voltages.
RFP22N10 Features
-
12A, 100V
-
rDS(ON)= 0.200Ω
-
Design Optimized for 5V Gate Drive
-
Can be Driven Directly from CMOS, NMOS, and TTL Circuits
-
Compatible with Automotive Drive Requirements
-
SOA is Power Dissipation Limited
-
Nanosecond Switching Speeds
-
Linear Transfer Characteristics
-
High Input Impedance
-
Majority Carrier Device
RFP22N10 Application
-
Other Industrial
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