RFP12N10L

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

Drain to Source Breakdown Voltage :

100V

Pbfree Code :

yes

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

900pF @ 25V

REACH SVHC :

No SVHC

Current :

12A

Power Dissipation :

60W

Number of Elements :

1

Continuous Drain Current (ID) :

12A

Power Dissipation-Max :

60W Tc

Resistance :

200mOhm

Height :

9.4mm

Length :

10.67mm

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

15 ns

Number of Channels :

1

Vgs (Max) :

±10V

Mount :

Through Hole

Gate to Source Voltage (Vgs) :

10V

Rise Time :

70ns

JEDEC-95 Code :

TO-220AB

Turn-Off Delay Time :

100 ns

Vgs(th) (Max) @ Id :

2V @ 250μA

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Weight :

4.535924g

Rds On (Max) @ Id, Vgs :

200m Ω @ 12A, 5V

Terminal Finish :

Tin (Sn)

Case Connection :

DRAIN

FET Type :

N-Channel

Threshold Voltage :

2V

Number of Pins :

3

Fall Time (Typ) :

80 ns

Published :

2005

Number of Terminations :

3

JESD-609 Code :

e3

Radiation Hardening :

No

Voltage :

100V

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Voltage - Rated DC :

100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

9 Weeks

Package / Case :

TO-220-3

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Transistor Application :

SWITCHING

Width :

4.83mm

Current Rating :

12A

Drive Voltage (Max Rds On,Min Rds On) :

5V

Element Configuration :

Single

Lead Free :

Lead Free

Packaging :

Tube