RFP12N10L

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Voltage :

100V

Drive Voltage (Max Rds On,Min Rds On) :

5V

Factory Lead Time :

9 Weeks

Threshold Voltage :

2V

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

2V @ 250μA

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

REACH SVHC :

No SVHC

Continuous Drain Current (ID) :

12A

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

80 ns

Operating Temperature :

-55°C~150°C TJ

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Published :

2005

Current Rating :

12A

Number of Terminations :

3

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

900pF @ 25V

Power Dissipation-Max :

60W Tc

Voltage - Rated DC :

100V

Width :

4.83mm

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

60W

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Vgs (Max) :

±10V

Package / Case :

TO-220-3

Transistor Application :

SWITCHING

Pbfree Code :

yes

Current :

12A

Element Configuration :

Single

Number of Elements :

1

Weight :

4.535924g

Mounting Type :

Through Hole

JEDEC-95 Code :

TO-220AB

Mount :

Through Hole

Lead Free :

Lead Free

Resistance :

200mOhm

JESD-609 Code :

e3

Packaging :

Tube

Terminal Finish :

Tin (Sn)

Rds On (Max) @ Id, Vgs :

200m Ω @ 12A, 5V

Drain to Source Breakdown Voltage :

100V

Height :

9.4mm

Length :

10.67mm

Number of Channels :

1

Rise Time :

70ns

Gate to Source Voltage (Vgs) :

10V

Turn-Off Delay Time :

100 ns

ECCN Code :

EAR99

Number of Pins :

3

Turn On Delay Time :

15 ns