RFP12N10L

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

Package / Case :

TO-220-3

Power Dissipation-Max :

60W Tc

Factory Lead Time :

9 Weeks

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

15 ns

Drive Voltage (Max Rds On,Min Rds On) :

5V

Pbfree Code :

yes

Transistor Application :

SWITCHING

FET Type :

N-Channel

Power Dissipation :

60W

Voltage :

100V

Weight :

4.535924g

Turn-Off Delay Time :

100 ns

Operating Temperature :

-55°C~150°C TJ

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Lead Free :

Lead Free

Packaging :

Tube

Vgs (Max) :

±10V

Width :

4.83mm

Rds On (Max) @ Id, Vgs :

200m Ω @ 12A, 5V

Element Configuration :

Single

Number of Pins :

3

Gate to Source Voltage (Vgs) :

10V

Terminal Finish :

Tin (Sn)

JESD-609 Code :

e3

REACH SVHC :

No SVHC

Number of Elements :

1

Current Rating :

12A

Rise Time :

70ns

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Fall Time (Typ) :

80 ns

Resistance :

200mOhm

Radiation Hardening :

No

Published :

2005

Vgs(th) (Max) @ Id :

2V @ 250μA

Length :

10.67mm

Mount :

Through Hole

Voltage - Rated DC :

100V

ECCN Code :

EAR99

Current :

12A

Transistor Element Material :

SILICON

Threshold Voltage :

2V

JEDEC-95 Code :

TO-220AB

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

100V

Continuous Drain Current (ID) :

12A

Mounting Type :

Through Hole

Height :

9.4mm

Number of Channels :

1

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

900pF @ 25V