RFP12N10L
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- Mfr.Part #
- RFP12N10L
- Manufacturer
- Harris Corporation
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 12A TO220-3
- Stock
- 5,502
- In Stock ：
- 5,502
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- Manufacturer :
- Harris Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~150°C TJ
- JEDEC-95 Code :
- TO-220AB
- Vgs (Max) :
- ±10V
- Fall Time (Typ) :
- 80 ns
- Turn On Delay Time :
- 15 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V
- Number of Channels :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 12A Tc
- Height :
- 9.4mm
- Power Dissipation-Max :
- 60W Tc
- Threshold Voltage :
- 2V
- Operating Mode :
- ENHANCEMENT MODE
- Packaging :
- Tube
- Drain to Source Breakdown Voltage :
- 100V
- Width :
- 4.83mm
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rise Time :
- 70ns
- Continuous Drain Current (ID) :
- 12A
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- Current Rating :
- 12A
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Current :
- 12A
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- Mounting Type :
- Through Hole
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Through Hole
- Weight :
- 4.535924g
- Resistance :
- 200mOhm
- Case Connection :
- DRAIN
- Factory Lead Time :
- 9 Weeks
- Number of Elements :
- 1
- Voltage :
- 100V
- Power Dissipation :
- 60W
- Length :
- 10.67mm
- Gate to Source Voltage (Vgs) :
- 10V
- Number of Terminations :
- 3
- Turn-Off Delay Time :
- 100 ns
- Package / Case :
- TO-220-3
- Terminal Finish :
- Tin (Sn)
- Input Capacitance (Ciss) (Max) @ Vds :
- 900pF @ 25V
- Published :
- 2005
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Voltage - Rated DC :
- 100V
- Rds On (Max) @ Id, Vgs :
- 200m Ω @ 12A, 5V
- Datasheets
- RFP12N10L
RFP12N10L Documents
N-Channel Tube 200m Ω @ 12A, 5V ±10V 900pF @ 25V TO-220-3
RFP12N10L Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 900pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 100V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 100V.As a result of its turn-off delay time, which is 100 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 15 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 10VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 2V.In addition to reducing power consumption, this device uses drive voltage (5V).
RFP12N10L Features
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 100 ns
a threshold voltage of 2V
RFP12N10L Applications
There are a lot of ON Semiconductor
RFP12N10L applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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